Product Datasheet Search Results:
- 2N1131
- American Microsemiconductor, Inc.
- 600 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
- 2N1131
- Thomson-csf
- Signal Transistors and Field Effect Transistors 1976
- 2N1131
- Central Semiconductor
- Trans GP BJT PNP 35V 0.6A 3-Pin TO-39 Box
- 2N1131A
- Central Semiconductor Corp.
- 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
- 2N1131ALEADFREE
- Central Semiconductor Corp.
- 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
- 2N1131 PBFREE
- Central Semiconductor
- Trans GP BJT PNP 35V 0.6A 600mW
- 2N1131
- Ferranti Semiconductors
- Shortform Data Book 1971
Product Details Search Results:
Americanmicrosemi.com/2N1131
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"35 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.6000 A","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Number of Terminals":"3","Number of Elements":"1"}...
1219 Bytes - 22:55:21, 26 December 2024
Centralsemi.com/2N1131
{"Collector Current (DC) ":"0.6(A)","Transistor Polarity":"PNP","Power Dissipation":"0.6(W)","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Collector-Emitter Voltage":"35(V)","Operating Temp Range":"-65C to 200C","Category ":"Bipolar Power","Packaging":"Box","Operating Temperature Classification":"Military","Rad Hardened":"No","Frequency":"50(MHz)","Package Type":"TO-39","Collector-Base Voltage":"50(V)","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3","Number of Elements":...
1556 Bytes - 22:55:21, 26 December 2024
Centralsemi.com/2N1131A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"40 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"90 MHz","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL S...
1267 Bytes - 22:55:21, 26 December 2024
Centralsemi.com/2N1131ALEADFREE
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"40 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"90 MHz","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Configuration":"SINGL...
1358 Bytes - 22:55:21, 26 December 2024
Centralsemi.com/2N1131 PBFREE
{"Collector Current (DC) ":"0.6(A)","Configuration":"Single","Transistor Polarity":"PNP","Category ":"Bipolar Power","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Collector-Emitter Voltage":"35(V)","Operating Temp Range":"-65C to 200C","Packaging":"Box","Power Dissipation":"0.6(W)","Rad Hardened":"No","Operating Temperature Classification":"Military","Package Type":"TO-39","Collector-Base Voltage":"50(V)","Output Power":"Not Required(W)","Frequency":"50(MHz)","Pin Count":"3","Number of Elements":...
1575 Bytes - 22:55:21, 26 December 2024
Dla.mil/2N1131+JAN
{"V(CE)sat Max.(V)":"1.5","Absolute Max. Power Diss. (W)":"600m","V(BR)CBO (V)":"50","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"20","I(C) Abs.(A) Collector Current":"600m","h(FE) Max. Current gain.":"45","@Freq. (Hz) (Test Condition)":"140k","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"50","Package":"TO-39","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"15m","V(BR)CEO (V)":"35","Military":"Y","Mil Number":"JAN2N1131","@I(C) (A) (Test Condition)":"150m"...
1047 Bytes - 22:55:21, 26 December 2024
Dla.mil/2N1131L+JAN
{"I(CBO) Max. (A)":"100u","Absolute Max. Power Diss. (W)":"600m","I(C) Abs.(A) Collector Current":"600m","C(obo) (Max) (F)":"45p","Package":"TO-39var","f(T) Min. (Hz) Transition Freq":"50M","V(BR)CEO (V)":"35","V(BR)CBO (V)":"50","Military":"Y","Mil Number":"JAN2N1131L"}...
786 Bytes - 22:55:21, 26 December 2024
Microchip.com/2N1131
1026 Bytes - 22:55:21, 26 December 2024
Microsemi.com/2N1131
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"40 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.6000 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROUND","Configuration":"SINGLE","Transi...
1276 Bytes - 22:55:21, 26 December 2024
Microsemi.com/2N1131L
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"40 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.6000 A","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","Nu...
1210 Bytes - 22:55:21, 26 December 2024
Microsemi.com/JAN2N1131
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"40 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.6000 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"RO...
1333 Bytes - 22:55:21, 26 December 2024
Microsemi.com/JAN2N1131L
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-5, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"40 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.6000 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"ROU...
1337 Bytes - 22:55:21, 26 December 2024