Product Datasheet Search Results:

IRF120.pdf5 Pages, 168 KB, Scan
IRF120
Fairchild Semiconductor
N-Channel Power MOSFETs, 11 A, 60-100 V
IRF120-123.pdf5 Pages, 168 KB, Scan
IRF120-123
Fairchild Semiconductor
N-Channel Power MOSFETs 11 A 60-100 V
IRF120.pdf4 Pages, 200 KB, Original
IRF120.pdf4 Pages, 200 KB, Original
IRF120
Frederick Components
Power MOSFET Selection Guide
IRF120.pdf1 Pages, 39 KB, Scan
IRF120
Motorola
European Master Selection Guide 1986
IRF120.pdf5 Pages, 162 KB, Scan
IRF120
General Electric Solid State
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A.
IRF120.pdf5 Pages, 168 KB, Scan
IRF120
Harris Semiconductor
Power MOSFET Data Book 1990
IRF120.pdf7 Pages, 48 KB, Original
IRF120
Intersil Corporation
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 ?, N-Channel, Power MOSFETs
IRF120.pdf1 Pages, 50 KB, Scan
IRF120
International Rectifier
9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF1205.pdf3 Pages, 38 KB, Original
IRF120.pdf4 Pages, 232 KB, Scan
IRF120
N/a
FET Data Book
IRF120.pdf5 Pages, 214 KB, Scan
IRF120
Samsung Electronics
N-CHANNEL POWER MOSFETS

Product Details Search Results:

Irf.com/IRF120
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"37 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.2 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source...
1319 Bytes - 06:00:21, 27 December 2024

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