Product Datasheet Search Results:
- IRF623
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 7A, 150-200V
- IRF623
- Fci Semiconductor
- POWER MOSFETs
- IRF623
- Frederick Components
- Power MOSFET Selection Guide
- IRF623
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A.
- IRF623
- General Electric
- Power Transistor Data Book 1985
- IRF623
- Harris Semiconductor
- Power MOSFET Data Book 1990
- IRF623R
- Harris Semiconductor
- Power MOSFET Data Book 1990
- IRF623
- International Rectifier
- 4.3 A, 150 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
- IRF623PBF
- International Rectifier
- 4.3 A, 150 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
- IRF623R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
Product Details Search Results:
Irf.com/IRF623
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"17 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.3 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SI...
1336 Bytes - 23:10:11, 26 December 2024
Irf.com/IRF623PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"17 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdo...
1411 Bytes - 23:10:11, 26 December 2024
Semelab.co.uk/IRF623
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source ...
1300 Bytes - 23:10:11, 26 December 2024
St.com/IRF623FI
{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"30","I(GSS) Max. (A)":"500n","I(DSS) Min. (A)":"1.0m","t(r) Max. (s) Rise time":"60n","V(BR)DSS (V)":"150","t(f) Max. (s) Fall time.":"60n","@I(D) (A) (Test Condition)":"2.5","I(D) Abs. Drain Current (A)":"3.5","Package":"TO-220AB","Military":"N","g(fs) Min. (S) Trans. conduct.":"1.3","r(DS)on Max. (Ohms)":"1.2"}...
857 Bytes - 23:10:11, 26 December 2024
Various/IRF623R
{"C(iss) Max. (F)":"450p","Absolute Max. Power Diss. (W)":"40","g(fs) Max, (S) Trans. conduct,":"2.5","I(D) Abs. Max.(A) Drain Curr.":"2.5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":"1.2","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"16","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"1.3","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"2.5","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Pack...
1295 Bytes - 23:10:11, 26 December 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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IRF6215.pdf | 0.13 | 1 | Request | |
IRF6215S.pdf | 0.17 | 1 | Request | |
IRF6218.pdf | 0.12 | 1 | Request | |
IRF6218S.pdf | 0.27 | 1 | Request | |
IRF6216.pdf | 0.10 | 1 | Request | |
IRF6201.pdf | 0.23 | 1 | Request | |
IRF6217.pdf | 0.10 | 1 | Request | |
IRF6215L.pdf | 0.17 | 1 | Request |