Product Datasheet Search Results:

IRF823.pdf5 Pages, 158 KB, Scan
IRF823
Fairchild Semiconductor
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
IRF823.pdf4 Pages, 200 KB, Original
IRF823.pdf4 Pages, 200 KB, Original
IRF823
Frederick Components
Power MOSFET Selection Guide
IRF823.pdf2 Pages, 141 KB, Scan
IRF823
Motorola / Freescale Semiconductor
N-CHANNEL Enhancement-Mode Silicon Gate TMOS
IRF823.pdf5 Pages, 165 KB, Scan
IRF823
General Electric Solid State
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A.
IRF823.pdf2 Pages, 125 KB, Scan
IRF823
General Electric
Power Transistor Data Book 1985
IRF823.pdf5 Pages, 176 KB, Scan
IRF823
Harris Semiconductor
Power MOSFET Data Book 1990
IRF823R.pdf5 Pages, 190 KB, Scan
IRF823R
Harris Semiconductor
Power MOSFET Data Book 1990
IRF823.pdf1 Pages, 41 KB, Original
IRF823
International Rectifier
TO-220 HEXFET Power MOSFET
IRF823R.pdf1 Pages, 48 KB, Original
IRF823R
International Rectifier
Rugged Series Power MOSFETs - N-Channel
IRF823.pdf4 Pages, 225 KB, Scan
IRF823
N/a
FET Data Book
IRF823R.pdf1 Pages, 84 KB, Scan
IRF823R
N/a
Shortform Datasheet & Cross References Data

Product Details Search Results:

Semelab.co.uk/IRF823
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.2 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On R...
1295 Bytes - 07:55:40, 11 December 2024
Various/IRF823R
{"C(iss) Max. (F)":"360p","Absolute Max. Power Diss. (W)":"50","g(fs) Max, (S) Trans. conduct,":"2.3","I(D) Abs. Max.(A) Drain Curr.":"1.4","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"42n","r(DS)on Max. (Ohms)":"4.0","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"7.0","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"1.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.4","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Pack...
1296 Bytes - 07:55:40, 11 December 2024

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